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參數(shù)資料
| 型號： | SI4924DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 67K |
| 代理商： | SI4924DY |
Si4924DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71163
S-03950—Rev. B, 26-May-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
GS( h)
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
Ch-1
Ch 1
0.8
V
Ch-2
0.8
Gate Body Leakage
Gate-Body Leakage
I
GSS
= 0 V V
V
DS
= 0 V, V
GS
=
20 V
Ch-1
Ch 1
100
nA
Ch-2
100
= 24 V V
V
DS
= 24 V, V
GS
= 0 V
Ch-1
Ch 1
1
Zero Gate Voltage Drain Current
I
DSS
Ch-2
1
A
= 24 V V
= 0 V T
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 C
Ch-1
Ch 1
15
Ch-2
15
On State Drain Current
On-State Drain Current
b
I
D(on)
= 5 V V
V
DS
= 5 V, V
GS
= 10 V
Ch-1
Ch 1
20
A
Ch-2
30
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 11.5 A
V
GS
= 4.5 V, I
D
= 5.4 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 6.3 A
V
DS
= 15 V, I
D
= 11.5 A
I
S
= 1.3 A, V
GS
= 0 V
I
S
= 2.2 A, V
GS
= 0 V
Ch-1
Ch 1
0.018
0.022
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
Ch-2
0.0088
0.0105
Ch-1
Ch 1
0.024
0.030
Ch-2
0.0115
0.0145
Forward Transconductance
b
g
fs
Ch-1
Ch 1
17
S
Ch-2
30
Diode Forward Voltage
b
V
SD
Ch-1
Ch 1
0.7
1.1
V
Ch-2
0.72
1.1
Dynamic
a
Total Gate Charge
Q
g
Ch-1
Ch 1
8.0
12
Channel-1
Ch-2
25.5
35
Gate Source Charge
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 6.3 A
Ch-1
Ch 1
1.75
nC
Channel-2
Channel 2
Ch-2
4.5
Gate Drain Charge
Gate-Drain Charge
Q
gd
V
DS
= 15 V,
V
GS
= 5 V, I
D
= -11.5 A
Ch-1
Ch 1
3.2
Ch-2
11.5
Gate Resistance
R
g
Ch-1
Ch 1
1.5
6.1
Ch-2
0.5
2.4
Turn On Delay Time
Turn-On Delay Time
t
d(on)
Ch-1
Ch 1
10
20
Channel-1
l 1
Ch-2
15
30
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
Ch-1
Ch 1
5
10
I
D
Ch-2
11
20
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
Channel-2
Channel 2
Ch-1
Ch 1
26
50
ns
V
= 15 V, R
= 15
1 A V
= 10 V R
1 A, V
GEN
= 10 V, R
G
= 6
I
D
Ch-2
58
100
Fall Time
t
f
Ch-1
Ch 1
8
16
Ch-2
53
100
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.3 A, di/dt = 100 A/ s
I
F
= 2.2 A, di/dt = 100 A/ s
Ch-1
Ch 1
30
60
Ch-2
42
70
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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| SI4924DY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Asymetrical Dual N-Channel 30-V (D-S) MOSFET |
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| SI4925BDY-E3 | 功能描述:MOSFET 30V 7.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925BDY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
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