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參數(shù)資料
| 型號： | SI4925BDY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 65K |
| 代理商： | SI4925BDY-T1 |
FEATURES
TrenchFET Power MOSFET
Advanced High Cell Density Process
APPLICATIONS
Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
Si4925BDY
Vishay Siliconix
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.025 @ V
GS
= -10 V
-7.1
0.041 @ V
GS
= -4.5 V
-5.5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information:
Si4925BDY
Si4925BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-7.1
-5.3
T
A
= 70 C
-5.7
-4.3
A
Pulsed Drain Current
I
DM
-40
continuous Source Current (Diode Conduction)
a
I
S
-1.7
-0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 70 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
50
62.5
Steady State
85
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
40
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4925BDY-T1-E3 | 功能描述:MOSFET 30 Volt 7.1 Amp 2.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925BDY-T1-E3 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET MATCHED PAIR P-CHAN 制造商:Vishay Siliconix 功能描述:DUAL P CHANNEL MOSFET, -30V, SOIC |
| SI4925BDY-T1-GE3 | 功能描述:MOSFET 30V 7.1A 2.0W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925DDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI4925DDY-T1-E3 | 制造商:Vishay Semiconductors 功能描述: |
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