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參數(shù)資料
| 型號： | SI4924DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 67K |
| 代理商： | SI4924DY |
Si4924DY
Vishay Siliconix
Document Number: 71163
S-03950—Rev. B, 26-May-03
www.vishay.com
1
Asymetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Channel 1
Channel-1
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.0105 @ V
GS
= 10 V
0.0145 @ V
GS
= 4.5 V
6.3
30
5.4
Channel 2
Channel-2
11.5
10
S
1
D
1
G
1
D
2
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
G
2
S
2
G
1
S
1
D
1
D
2
D
2
D
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
Ordering Information:
Si4924DY
Si4924DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
6.3
5.3
11.5
8.6
5.4
4.2
9.5
6.9
A
Pulsed Drain Current
I
DM
I
S
30
40
Continuous Source Current (Diode Conduction)
a
1.3
0.9
2.2
1.15
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
1.4
1.0
2.4
1.25
W
0.9
0.64
1.5
0.80
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
72
90
43
53
Steady-State
100
125
82
100
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJC
51
63
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4924DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4925BDY-T1-E3 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4925BDY-E3 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4925BDY-T1 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4925 | Dual P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4924DY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Asymetrical Dual N-Channel 30-V (D-S) MOSFET |
| SI4925 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI4925BDY | 功能描述:MOSFET 30V 7.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925BDY-E3 | 功能描述:MOSFET 30V 7.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4925BDY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
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