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參數(shù)資料
| 型號(hào)： | SI4854DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI4854DY |
Si4854DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71444
S-03476
—
Rev. A, 16-Apr-01
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
0.6
V
Gate-Body Leakage
12 V
100
nA
Ch-1
1
V
DS
= 24 V, V
GS
= 0 V
Ch-2
100
Zero Gate Voltage Drain Current
I
DSS
Ch-1
15
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 C
Ch-2
2000
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6.9 A
V
GS
= 4.5 V, I
D
= 6.4 A
V
GS
= 2.5 V, I
D
= 5.5 A
V
DS
= 15 V, I
D
= 6.9 A
20
A
0.021
0.026
Drain-Source On-State Resistance
b
r
DS(on)
0.024
0.030
0.034
0.041
Forward Transconductance
b
g
fs
22
S
Ch-1
0.7
1.2
Diode Forward Voltage
b
V
SD
I
S
= 1 A, V
GS
= 0 V
Ch-2
0.47
0.5
V
Dynamic
a
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
9
14
Gate-Source Charge
V
= 15 V,
V
= 4.5 V, I
= 6.9 A
DS
GS
2.1
nC
Gate-Drain Charge
D
2.6
Turn-On Delay Time
20
30
Rise Time
V
= 15 V, R
= 15
1 A, V
GEN
= 4.5 V, R
G
= 6
20
30
Turn-Off Delay Time
I
D
35
55
Fall Time
10
20
ns
Ch-1
40
80
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
Ch-2
32
70
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
F
= 1.0 A
0.47
0.50
Forward Voltage Drop
V
F
I
F
= 1.0 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 C
V
r
=
–
30 V, T
J
= 125 C
V
r
= 10 V
0.36
0.42
V
0.004
0.100
Maximum Reverse Leakage Current
I
rm
0.7
10
mA
3.0
20
Junction Capacitance
C
T
50
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4854DY-E3 | 功能描述:MOSFET 30V 6.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4854DY-T1-E3 | 功能描述:MOSFET 30 Volt 6.9 Amp 2.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4856ADY-RC | 制造商:VAISH 制造商全稱:VAISH 功能描述:R-C Thermal Model Parameters |
| SI4856ADY-T1-E3 | 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4856DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V MOSFET |
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