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參數(shù)資料
| 型號： | SI4835BDY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | SI4835BDY-T1 |
Si4835BDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72029
S-31062—Rev. C, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
-3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
25
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
A
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55 C
-5
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -10 V
-50
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -9.6 A
0.014
0.018
V
GS
= -4.5 V, I
D
= -7.5 A
0.023
0.030
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -9.6 A
30
S
Diode Forward Voltage
a
V
SD
I
S
= -2.1 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
25
37
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -5 V, I
D
= -9.6 A
6.5
nC
Gate-Drain Charge
Q
gd
12.5
Gate Resistance
R
g
1.0
2.9
4.9
Turn-On Delay Time
t
d(on)
15
25
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
13
20
Turn-Off Delay Time
t
d(off)
I
D
60
100
ns
Fall Time
t
f
45
70
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.1 A, di/dt = 100 A/ s
45
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0
1
2
3
4
5
0
10
20
30
40
50
0
1
2
3
4
5
6
V
GS
= 10 thru 5 V
T
C
= -55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
4 V
3 V
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