參數(shù)資料
型號(hào)： SI4818DY-T1
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 68K
代理商： SI4818DY-T1
Si4818DY
Vishay Siliconix
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Channel 1
Channel-1
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.0155 @ V
GS
= 10 V
0.0205 @ V
GS
= 4.5 V
6.3
30
5.4
Channel 2
Channel-2
9.5
8.2
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
2.0
S
1
D
1
G
1
D
2
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
G
2
S
2
G
1
S
1
D
1
D
2
D
2
D
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
Schottky Diode
A
Ordering Information:
Si4818DY
Si4818DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
6.3
5.3
9.5
7.0
5.4
4.2
7.6
5.6
A
Pulsed Drain Current
I
DM
I
S
30
40
Continuous Source Current (Diode Conduction)
a
1.3
0.9
2.2
1.15
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
1.4
1.0
2.4
1.25
W
0.9
0.64
1.5
0.80
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
72
90
43
53
48
60
Steady-State
100
125
82
100
80
100
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJC
51
63
25
30
28
35
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
Si4818DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4824DY Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
SI4825DY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V
Si4830DY-T1 Paired Cable; Number of Conductors:18; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:9; Voltage Nom.:300V RoHS Compliant: Yes
Si4830ADY Dual N-Ch. mosfet plus Schottky diode;
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4818DY-T1-E3 功能描述:MOSFET 30V 6.3/9.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4818DY-T1-GE3 功能描述:MOSFET 30V 6.3/9.5A 22/15.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4820-A10-CU 功能描述:IC RCVR AM/FM MECH TUNER 24-SSOP RoHS:是 類別:RF/IF 和 RFID >> RF 接收器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS 產(chǎn)品變化通告:Product Discontinuation 09/Jan/2012 標(biāo)準(zhǔn)包裝:50 系列:* 頻率:850MHz ~ 2.175GHz 靈敏度:- 數(shù)據(jù)傳輸率 - 最大:- 調(diào)制或協(xié)議:- 應(yīng)用:* 電流 - 接收:* 數(shù)據(jù)接口:PCB，表面貼裝 存儲(chǔ)容量:- 天線連接器:PCB，表面貼裝 特點(diǎn):- 電源電壓:4.75 V ~ 5.25 V 工作溫度:0°C ~ 85°C 封裝/外殼:40-WFQFN 裸露焊盤 供應(yīng)商設(shè)備封裝:40-TQFN-EP（6x6） 包裝:托盤
SI4820-A10-CUR 制造商:Silicon Laboratories Inc 功能描述:CONSUMER ELECTRONICS. AM/FM RX FOR MECHANICAL TUNED RADIOS, - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC RCVR AM/FM MECH TUNER 24-SSOP
SI4820DY 功能描述:MOSFET 30V 10A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*