參數(shù)資料
型號(hào)： Si4830ADY
廠商： Vishay Intertechnology,Inc.
英文描述： Dual N-Ch. mosfet plus Schottky diode;
中文描述： 帶肖特基二極管的雙N溝道MOSFET
文件頁數(shù)： 1/5頁
文件大?。?/td> 65K
代理商： SI4830ADY
Si4830DY
Vishay Siliconix
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
I
D
(A)
7.5
30
6.5
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
2.0
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
Si4830DY
Si4830DY-T1 (with Tape and Reel)
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
N-Channel MOSFET
D
2
D
2
G
2
S
2
Schottky Diode
Ordering Information:
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
7.5
5.7
6.0
4.6
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
30
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
2.0
1.1
W
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
52
62.5
53
62.5
Steady-State
93
110
93
110
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJC
35
40
35
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI4830DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4834DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4834DY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4842DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4845DY P-Channel 20-V (D-S) MOSFET,Low-Threshold
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4830ADY-E3 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP
SI4830ADY-T1-E3 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4830ADY-T1-GE3 功能描述:MOSFET 30V 7.5A 2.0W 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4830CDY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4830CDY-T1-E3 功能描述:MOSFET 30V 8.0A 2.9W 20mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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