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參數(shù)資料
| 型號： | SI4845DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | SI4845DY |
LITTLE FOOT
Plus
Power MOSFET
Asynchronous DC/DC Buck
Si4845DY
Vishay Siliconix
New Product
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET with Schottky Diode
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
Q
g
(Typ)
–20
0.210 @ V
GS
= –4.5 V
0.345 @ V
GS
= –2.5 V
– 2.7
2 9
2.9
–2.1
V
KA
(V)
V
f
(V)
Diode Forward Voltage
I
F
(A)
a
20
0.50 V @ 1 A
2.4
K
A
A
K
A
K
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information:
Si4845DY-T1—E3 (Lead (Pb)–Free)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V
DS
V
KA
–20
Reverse Voltage (Schottky)
–20
V
Gate-Source Voltage (MOSFET)
V
GS
12
T
C
= 25 C
– 2.7
Continuous Drain Current (T
J
= 150 C) (MOSFET)
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
I
D
–2.1
–2.1
b, c
–1.7
b, c
–7
–2.4
–1.9
b, c
– 1
b
–7
2.75
1.75
1.75
b, c
1.1
b, c
Pulsed Drain Current (MOSFET)
I
DM
A
Continuous Source Current (MOSFET Diode Conduction)
T
C
= 25 C
T
A
= 25 C
I
S
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
I
F
I
FM
T
C
= 25 C
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
Maximum Power Dissipation (Schottky)
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
(MOSFET and Schottky)
R
thJA
60
71.5
C/W
Maximum Junction-to-Foot (Drain)
(MOSFET and Schottky)
R
thJF
35
45
Notes
a.
b.
c.
d.
Based on T
= 25 C.
Surface Mounted on FR4 Board.
t
10 sec.
Maximum under Steady State conditions is 120 C/W.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4845DY-T1-E3 | 功能描述:MOSFET 20V 2.7A 2.75W 210mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4848DY | 功能描述:MOSFET 150V 3.7A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4848DY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) MOSFET |
| SI4848DY-E3 | 功能描述:MOSFET 150V 3.7A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4848DY-T1 | 功能描述:MOSFET 150V 3.7A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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