參數(shù)資料
型號： SI4850EY-T1
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel Reduced Qg, Fast Switching MOSFET
中文描述： N溝道減少Q(mào)g和，快速開關(guān)MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 60K
代理商： SI4850EY-T1
Si4850EY
Vishay Siliconix
Document Number: 71146
S-40572—Rev. D, 29-Mar-04
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.022 @ V
GS
= 10 V
0.031 @ V
GS
= 4.5 V
8.5
7.2
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4850EY
Si4850EY—E3 (Lead Free)
Si4850EY-T1 (with Tape and Reel)
Si4850EY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 175 C)
a
T
A
= 25 C
I
D
8.5
6.0
T
A
= 70 C
7.1
5.0
A
Pulsed Drain Current
I
DM
40
Avalanche Current
I
AS
15
Repetitive Avalanche Energy
E
AS
11
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.3
1.7
W
T
A
= 70 C
2.3
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
36
45
Steady State
75
90
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17
20
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI4850EY-T1-E3 N-Channel Reduced Qg, Fast Switching MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4850EY-T1-E3 功能描述:MOSFET 60 Volt 8.5 Amp 3.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4850EY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI4850EY-T1-GE3 功能描述:MOSFET 60V 8.5A 3.3W 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4852DY 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4852DY-E3 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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