參數(shù)資料
型號： SI4860DY
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching
中文描述： N溝道MOSFET，30V（D-S），低Qg，快速開關(guān)
文件頁數(shù)： 1/4頁
文件大?。?/td> 39K
代理商： SI4860DY
FEATURES
TrenchFET Power MOSFETS
PWM Optimized for High Efficiency
100% R
G
Tested
APPLICATIONS
Buck Converter
- High Side
- Low Side
Synchronous Rectifier
- Secondary Rectifier
D
Si4860DY
Vishay Siliconix
New Product
Document Number: 71752
S-03662—Rev. C, 14-Apr-03
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.008 @ V
GS
= 10 V
0.011 @ V
GS
= 4.5 V
16
15
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
16
11
T
A
= 70 C
13
8
A
Pulsed Drain Current
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
3.0
1.40
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.6
W
T
A
= 70 C
2.2
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
a
t
10 sec
R
thJA
29
35
Steady State
67
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI4862DY N-Channel 16-V (D-S) MOSFET
SI4864DY N-Channel 20-V (D-S) MOSFET
SI4866DY N-Channel Reduced Qg, Fast Switching MOSFET
SI4872DY N-Channel Reduced Qg, Fast Switching MOSFET
Si4874DY N-Channel 30-V MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4860DY-E3 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP
SI4860DY-T1 功能描述:MOSFET 30V 16A 1.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4860DY-T1-E3 功能描述:MOSFET 30V 16A 1.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4860DY-T1-GE3 功能描述:MOSFET 30V 16A 3.5W 8.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4862DY 功能描述:MOSFET 16V 25A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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