參數(shù)資料
型號: SI4872DY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Reduced Qg, Fast Switching MOSFET
中文描述: N溝道減少Q(mào)g和,快速開關(guān)MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 57K
代理商: SI4872DY
Si4872DY
Vishay Siliconix
New Product
Document Number: 71248
S-01552—Rev. A, 17-Jul-00
www.vishay.com FaxBack 408-970-5600
1
N-Channel Reduced Q
g
, Fast Switching MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0075 @ V
GS
= 10 V
0.010 @ V
GS
= 4.5 V
15
13
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
D
G
S
D
D
S
S
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
15
11.0
A
T
A
= 70 C
13
9.0
Pulsed Drain Current (10 s Pulse Width)
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
2.7
1.40
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.10
1.56
W
T
A
= 70 C
2
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
33
40
C/W
Steady State
68
80
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
Notes
a.
Surface Mounted on FR4 Board.
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