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參數(shù)資料
| 型號： | SI4874DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrencha MOSFET |
| 中文描述： | 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SI4874DY |
FEATURES
TrenchFET Power MOSFETS
100% R
g
Tested
Si4874BDY
Vishay Siliconix
New Product
Document Number: 73058
S-41508—Rev. A, 09-Aug-04
www.vishay.com
1
N-Channel 30-V MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.007 @ V
GS
= 10 V
0.0085 @ V
GS
= 4.5 V
16
14
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
G
S
Ordering Information:
Si4874BDY—E3
Si4874BDY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
16
12
T
A
= 70 C
13
9
A
Pulsed Drain Current
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
2.7
1.40
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.0
1.6
W
T
A
= 70 C
2.0
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
a
t
10 sec
R
thJA
34
41
Steady State
68
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4874DY-E3 | 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4874DY-T1 | 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4874DY-T1-E3 | 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4874DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI4876DY | 功能描述:MOSFET 20V 21A 3.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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