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參數資料
| 型號： | SI4896DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 80-V (D-S) MOSFET |
| 中文描述： | N通道80V（D-S）MOSFET |
| 文件頁數： | 1/5頁 |
| 文件大小： | 45K |
| 代理商： | SI4896DY |
Si4896DY
Vishay Siliconix
Document Number: 71300
S-03950—Rev. B, 26-May-03
www.vishay.com
1
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
80
0.0165 @ V
GS
= 10 V
0.022 @ V
GS
= 6.0 V
9.5
8.3
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4896DY
Si4896DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
80
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
9.5
6.7
T
A
= 70 C
7.6
5.4
Pulsed Drain Current
I
DM
50
A
Avalanch Current
L = 0.1 mH
I
AS
40
Continuous Source Current (Diode Conduction)
a
I
S
2.8
1.4
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.1
1.56
W
T
A
= 70 C
2.0
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
40
Steady State
65
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4896DY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 80-V (D-S) MOSFET |
| SI4896DY-E3 | 功能描述:MOSFET 80V 9.5A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4896DY-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Leaded Process Compati |
| SI4896DY-T1 | 功能描述:MOSFET 80V 9.5A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4896DY-T1-E3 | 功能描述:MOSFET 80V 9.5A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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