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參數(shù)資料
| 型號： | SI4923DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SI4923DY |
FEATURES
TrenchFET Power MOSFET
Advanced High Cell Density Process
APPLICATIONS
Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
Battery Switch
Si4923DY
Vishay Siliconix
New Product
Document Number: 72069
S-22120—Rev. A, 25-Nov-02
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.021 @ V
GS
= -10 V
-8.3
-30
0.031 @ V
GS
= -4.5 V
- 6.8
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
- 8.3
-6.2
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
-6.6
-5.0
Pulsed Drain Current
I
DM
-30
A
continuous Source Current (Diode Conduction)
a
I
S
-1.7
-0.9
T
A
= 25 C
2.0
1.1
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.3
0.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
45
62.5
Maximum Junction-to-Ambient
a
Steady State
R
thJA
85
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
26
35
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.
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| SI4931DY-T1 | Dual P-Channel 12-V (D-S) MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4923DY-T1 | 功能描述:MOSFET 30V 8.3A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4923DY-T1-E3 | 功能描述:MOSFET 30V 8.3A 2.0W 21mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4923DY-T1-GE3 | 功能描述:MOSFET 30V 8.3A 2.0W 21mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4924DY | 功能描述:MOSFET 30V 4.7/9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4924DY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Asymetrical Dual N-Channel 30-V (D-S) MOSFET |
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