參數(shù)資料
型號： SI4824DY
廠商： Vishay Intertechnology,Inc.
英文描述： Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
中文描述： 不對稱N溝道，降低Qg和，快速開關(guān)MOSFET
文件頁數(shù)： 1/6頁
文件大小： 88K
代理商： SI4824DY
Si4824DY
Vishay Siliconix
Document Number: 70800
S-56946—Rev. C, 23-Nov-98
www.vishay.com FaxBack 408-970-5600
2-1
Asymmetric N-Channel, Reduced Q
g
, Fast Switching MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N-Channel 1
30
0.040 @ V
GS
= 10 V
0.065 @ V
GS
= 4.5 V
0.0175 @ V
GS
= 10 V
0.027 @ V
GS
= 4.5 V
4.7
3.7
N-Channel 2
9
7.3
S
1
D
1
G
1
D
2
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET 1
D
1
G
1
S
1
N-Channel MOSFET 2
D
2
D
2
G
2
S
2
D
2
Parameter
Symbol
N-Channel 1
N-Channel 2
Unit
Drain-Source Voltage
V
DS
30
30
V
Gate-Source Voltage
V
GS
20
20
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
T
A
= 70 C
I
D
4.7
9
A
3.7
7.2
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
40
60
1.2
2.0
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
1.4
2.25
W
0.9
1.5
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
A bi
a
N-Ch 1
t
10 sec
R
thJA
90
C/W
Steady State
125
N-Ch 2
t
10 sec
55
Steady State
80
Notes
a.
b.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board.
t
10 sec.
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