參數(shù)資料
型號： Si4818DY
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 1/8頁
文件大?。?/td> 68K
代理商： SI4818DY
Si4818DY
Vishay Siliconix
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Channel 1
Channel-1
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.0155 @ V
GS
= 10 V
0.0205 @ V
GS
= 4.5 V
6.3
30
5.4
Channel 2
Channel-2
9.5
8.2
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
2.0
S
1
D
1
G
1
D
2
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
G
2
S
2
G
1
S
1
D
1
D
2
D
2
D
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
Schottky Diode
A
Ordering Information:
Si4818DY
Si4818DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
6.3
5.3
9.5
7.0
5.4
4.2
7.6
5.6
A
Pulsed Drain Current
I
DM
I
S
30
40
Continuous Source Current (Diode Conduction)
a
1.3
0.9
2.2
1.15
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
1.4
1.0
2.4
1.25
W
0.9
0.64
1.5
0.80
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
72
90
43
53
48
60
Steady-State
100
125
82
100
80
100
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJC
51
63
25
30
28
35
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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