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參數(shù)資料
| 型號： | SI4808DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 46K |
| 代理商： | SI4808DY |
Si4808DY
Vishay Siliconix
Document Number: 71157
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
7.5
6.5
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
2.0
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
N-Channel MOSFET
D
2
D
2
G
2
S
2
Schottky Diode
Ordering Information:
Si4808DY
Si4808DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
7.5
5.7
6.0
4.6
A
Pulsed Drain Current
I
DM
I
S
30
Continuous Source Current (Diode Conduction)
a
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
2.0
1.1
W
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
52
62.5
53
62.5
Steady-State
93
110
93
110
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJC
35
40
35
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| Si4830DY-T1 | Paired Cable; Number of Conductors:18; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:9; Voltage Nom.:300V RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4808DY-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-T1 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-T1-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-T1-GE3 | 功能描述:MOSFET 30V 7.5A 2.0W 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4810BDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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