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參數(shù)資料
| 型號： | SI3865DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | HTSK/D2PAK SM TO-252 |
| 中文描述： | iLoad開關(guān)電平轉(zhuǎn)換 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 69K |
| 代理商： | SI3865DV |
Si3865DV
Vishay Siliconix
New Product
Document Number: 70867
S-60515—Rev. A, 05-Apr-99
www.vishay.com FaxBack 408-970-5600
2-1
Load Switch with Level-Shift
V
DS2
(V)
r
DS(on)
( )
I
D
(A)
1 8
1.8 to 8
0.080 @ V
IN
= 4.5 V
2.7
0.110 @ V
IN
= 2.5 V
2.2
0.175 @ V
IN
= 1.8 V
1.7
80-m Low r
DS(on)
TrenchFET
1.8 to 8
-V Input
1.5 to 8
-V Logic Level Control
Low Profile, Small Footprint TSOP-6 Package
3000-V ESD Protection On Input Switch, V
ON/OFF
Adjustable Slew-Rate
The Si3865DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3865DV operates on
supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A.
Switching Variation
R2 @ V
IN
=
V, R1 =
k
0
8
16
24
32
40
0
2
4
6
8
R2 (k )
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
C
o
= 1 F
t
r
t
d(on)
t
d(off)
t
f
(
T
S
Note: For R2 switching variations with other V
IN
/R1
combinations See Typical Characteristics
V
OUT
GND
LOAD
V
IN
ON/OFF
R2
R2
1
2, 3
C1
6
4
6
5
R1
Q1
Q2
Si3865DV
C
o
C
i
R1
Pull-Up Resistor
Typical 10 k to 1 m *
R2
Optional Slew-Rate Control
Typical 0 to 100 k *
C1
Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si3865DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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| SI3867DV | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI3900DV | Dual N-Channel 20-V (D-S) MOSFET |
| SI3909DV | Dual P-Channel 20-V (D-S) MOSFET |
| SI3911DV | Dual P-Channel MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3865DV-T1 | 功能描述:電源開關(guān) IC - 配電 8V 2.7A 0.83W RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| SI3867DV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI3867DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI3867DV-T1 | 功能描述:MOSFET 20V 5.1A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3867DV-T1-E3 | 功能描述:MOSFET 20V 5.1A 2.0W 51mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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