參數(shù)資料
型號(hào): SI3863DV
廠商: Vishay Intertechnology,Inc.
英文描述: AB 47C 1#12 46#16 PIN RECP
中文描述: 負(fù)載開關(guān),移
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 59K
代理商: SI3863DV
Si3863DV
Vishay Siliconix
New Product
Document Number: 70866
S-60514—Rev. A, 5-Apr-99
www.vishay.com FaxBack 408-970-5600
2-1
Load Switch with Level-Shift
V
DS2
(V)
r
DS(on)
( )
I
D
(A)
2 5
2.5 to 12
0.105 @ V
IN
= 4.5 V
2.5
0.125 @ V
IN
= 3.0 V
2.1
0.165 @ V
IN
= 2.5 V
1.8
105-m Low r
DS(on)
TrenchFET
2.5 to 12
-V Input
1.5 to 8
-V Logic Level Control
Low Profile, Small Footprint TSOP-6 Package
3000-V ESD Protection On Input Switch, V
ON/OFF
Adjustable Slew-Rate
The Si3863DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3863DV operates on
supply lines from 2.5 to 12-V, and can drive loads up to 2.5
A.
0
5
10
15
20
25
0
2
4
6
8
R2 (k )
Switching Variation
R2 @ V
IN
= 3 V, R1 = 20 k
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
C
o
= 1 F
t
r
t
d(on)
t
d(off)
t
f
(
T
S
Note: For R2 switching variations with other V
IN
/R1
combinations See Typical Characteristics
V
OUT
GND
LOAD
V
IN
ON/OFF
R2
R2
1
2, 3
C1
6
4
6
5
R1
Q1
Q2
Si3863DV
C
o
C
i
R1
Pull-Up Resistor
Typical 10 k to 1 m *
R2
Optional Slew-Rate Control
Typical 0 to 100 k *
C1
Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si3863DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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