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參數(shù)資料
| 型號： | SI4346DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 86K |
| 代理商： | SI4346DY |
FEATURES
TrenchFET Gen II Power MOSFET
100% R
g
Tested
APPLICATIONS
High-Side DC/DC Conversion
Notebook
Desktop
Server
Notebook Logic DC/DC, Low-Side
Si4346DY
Vishay Siliconix
New Product
Document Number: 72958
S-41793—Rev. B, 04-Oct-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
0.023 @ V
GS
= 10 V
0.025 @ V
GS
= 4.5 V
0.030 @ V
GS
= 3.0 V
0.036 @ V
GS
= 2.5 V
8
30
7.5
6 5
6.5
6.8
6.0
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4346DY—E3
Si4346DY-T1—E3 ( with Tape and Reel)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
8
5.9
T
A
= 70 C
6.5
4.7
A
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
2.2
1.20
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.31
W
T
A
= 70 C
1.6
0.84
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
43
50
Steady State
74
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
22
27
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4346DY-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4346DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4362DY-T1 | Paired Cable; Number of Conductors:6; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:3; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| Si4362DY-T1E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4362DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4346DY-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4346DY-T1-E3 | 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4346DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 30V 8A SOIC |
| SI4346DY-T1-GE3 | 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4348DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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