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參數(shù)資料
| 型號： | SI4300DY-TI |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode |
| 中文描述： | N溝道30 V的（副），減少Q(mào)g和快速開關(guān)MOSFET和肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI4300DY-TI |
FEATURES
TrenchFET Power MOSFET
LITTLE FOOT
Plus Integrated Schottky
PWM Optimized
APPLICATIONS
Low Power Sychronous Rectification
Si4300DY
Vishay Siliconix
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0185 @ V
GS
= 10 V
0.033 @ V
GS
= 4.5 V
9
7
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(v)
Diode Forward Voltage
I
F
(A)
30
0.5 V @ 1 A
2.0
S/A
D/K
S/A
D/K
S/A
D/K
G
D/K
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
K
G
S
Schottky Diode
A
D
Ordering Information:
Si4300DY
Si4300DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
DS
V
DA
V
GS
30
Reverse Voltage (Schottky)
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
(MOSFET)
a
T
A
= 25 C
T
A
= 70 C
I
D
9
6.4
7
5.1
Pulsed Drain Current (MOSFET)
I
DM
I
S
I
F
I
FM
40
A
Continuous Source Current (MOSFET Diode Conduction)
a
2.3
1.25
Average Foward Current (Schottky)
2.3
1.25
Pulsed Foward Current (Schottky)
20
Maximum Power Dissipation (MOSFET)
a
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
2.5
1.38
P
D
1.6
0.88
W
Maximum Power Dissipation (Schottky)
a
2.2
1.25
1.4
0.80
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
40
50
45
55
Steady-State
70
90
78
100
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
18
23
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4346DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4346DY-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4346DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4362DY-T1 | Paired Cable; Number of Conductors:6; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:3; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| Si4362DY-T1E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4300-E1-GM | 制造商:Silicon Laboratories Inc 功能描述: |
| Si4300-E-BM | 功能描述:射頻無線雜項 Dual-band GSM900 and DCS1800 Pwr Amp RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| Si4300-EVB | 功能描述:射頻開發(fā)工具 Dual-band GSM900 Pwr Amp EVB RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| SI4300T | 制造商:SILABS 制造商全稱:SILABS 功能描述:Tri-Band Monolithic Power Amplifier System |
| Si4300T-B-BM | 功能描述:射頻無線雜項 Triple-band GSM900 Pwr Amp RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
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