參數(shù)資料
型號(hào)： SI4300DY
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
中文描述： N溝道30 V的（副），減少Q(mào)g和快速開(kāi)關(guān)MOSFET和肖特基二極管
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 45K
代理商： SI4300DY
FEATURES
TrenchFET Power MOSFET
LITTLE FOOT
Plus Integrated Schottky
PWM Optimized
APPLICATIONS
Low Power Sychronous Rectification
Si4300DY
Vishay Siliconix
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0185 @ V
GS
= 10 V
0.033 @ V
GS
= 4.5 V
9
7
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(v)
Diode Forward Voltage
I
F
(A)
30
0.5 V @ 1 A
2.0
S/A
D/K
S/A
D/K
S/A
D/K
G
D/K
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
K
G
S
Schottky Diode
A
D
Ordering Information:
Si4300DY
Si4300DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
DS
V
DA
V
GS
30
Reverse Voltage (Schottky)
30
V
Gate-Source Voltage
20
Continuous Drain Current
(T
J
= 150 C)
(MOSFET)
a
T
A
= 25 C
T
A
= 70 C
I
D
9
6.4
7
5.1
Pulsed Drain Current (MOSFET)
I
DM
I
S
I
F
I
FM
40
A
Continuous Source Current (MOSFET Diode Conduction)
a
2.3
1.25
Average Foward Current (Schottky)
2.3
1.25
Pulsed Foward Current (Schottky)
20
Maximum Power Dissipation (MOSFET)
a
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
2.5
1.38
P
D
1.6
0.88
W
Maximum Power Dissipation (Schottky)
a
2.2
1.25
1.4
0.80
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
40
50
45
55
Steady-State
70
90
78
100
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
18
23
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4300DY-E3 功能描述:MOSFET N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4300DY-T1-E3 功能描述:MOSFET 30 Volt 9.0 Amp 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4300DY-TI 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
SI4300-E1-GM 制造商:Silicon Laboratories Inc 功能描述:
Si4300-E-BM 功能描述:射頻無(wú)線雜項(xiàng) Dual-band GSM900 and DCS1800 Pwr Amp RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel
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