- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365547 > Si3853DV (Vishay Intertechnology,Inc.) Single P-Channel MOSFET with integrated Schottky; PDF資料下載
參數(shù)資料
| 型號： | Si3853DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Single P-Channel MOSFET with integrated Schottky; |
| 中文描述： | 單P溝道MOSFET，集成肖特基; |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 72K |
| 代理商： | SI3853DV |
Si3853DV
Vishay Siliconix
New Product
Document Number: 70979
S-61846—Rev. A, 04-Oct-99
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel 20-V (D-S) MOSFET With Schottky Diode
V
DS
(V)
r
DS(on)
( )
I
D
(A)
–20
0.200 @ V
GS
= –4.5 V
0.340 @ V
GS
= –2.5 V
1.8
1.3
V
KA
(V)
V
f
(v)
Diode Forward Voltage
I
F
(A)
20
0.48 V @ 0.5 A
0.5
K
A
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D
G
N/C
S
K
A
S
G
D
P-Channel MOSFET
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
V
DS
V
KA
–20
V
Reverse Voltage (Schottky)
20
Gate-Source Voltage (MOSFET)
V
GS
12
12
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a
T
A
= 25 C
I
D
1.8
1.6
A
T
A
= 70 C
1.5
1.2
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a
I
DM
I
S
I
F
I
FM
7
–1.05
–0.75
Average Foward Current (Schottky)
0.5
Pulsed Foward Current (Schottky)
7
Maximum Power Dissipation (MOSFET)
a
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
P
D
1.15
0.83
W
0.73
0.53
Maximum Power Dissipation (Schottky)
a
1.0
0.76
0.64
0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Surface Mounted on 1” x1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI3865DV | HTSK/D2PAK SM TO-252 |
| SI3867DV | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI3900DV | Dual N-Channel 20-V (D-S) MOSFET |
| SI3909DV | Dual P-Channel 20-V (D-S) MOSFET |
| SI3911DV | Dual P-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3853DV-T1 | 功能描述:MOSFET 20V 1.8A 1.15W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3853DV-T1-E3 | 功能描述:MOSFET 20V 1.8A 1.15W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3853DV-T1-GE3 | 功能描述:MOSFET 20V 1.8A 1.15W 200mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3861 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated Load Switch |
| SI3861BDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Load Switch with Level-Shift |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。