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參數(shù)資料
| 型號： | SI3586DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 88K |
| 代理商： | SI3586DV |
FEATURES
TrenchFET Power MOSFET
Fast Switching In Small Footprint
Very Low r
DS(on)
for Increased Efficiency
APPLICATIONS
Load Switch for Portable Devices
Si3586DV
Vishay Siliconix
New Product
Document Number: 72310
S-32412—Rev. B, 24-Nov-03
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.060 @ V
GS
= 4.5 V
3.4
N-Channel
20
0.070 @ V
GS
= 2.5 V
3.2
0.100 @ V
GS
= 1.8 V
2.5
0.110 @ V
GS
=
4.5 V
2.5
P-Channel
20
0.145 @ V
GS
=
2.5 V
2.0
0.220 @ V
GS
=
1.8 V
1.0
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
Ordering Information: Si3586DV-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
3.4
2.9
2.5
2.1
T
A
= 70 C
2.7
2.3
2.0
1.7
A
Pulsed Drain Current
I
DM
8
Continuous Source Current (Diode Conduction)
a
I
S
1.05
0.75
1.05
0.75
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.15
0.83
1.15
0.83
W
T
A
= 70 C
0.73
0.53
0.73
0.53
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
93
110
Steady State
130
150
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
90
90
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3586DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
| SI3586DV_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
| SI3586DV-T1 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N/P-CH 20V 2.9A/2.1A 6TSOP - Tape and Reel |
| SI3586DV-T1-E3 | 功能描述:MOSFET N&P-CH 20V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3586DV-T1-GE3 | 功能描述:MOSFET 20V 3.4/2.5A 1.15W 60/110mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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