參數(shù)資料
型號(hào): SI3483DV-T1-E3
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 30-V (D-S) MOSFET
中文描述: P溝道30V的MOSFET
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 66K
代理商: SI3483DV-T1-E3
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
Si3483DV
Vishay Siliconix
Document Number: 72078
S-40238—Rev. B, 16-Feb-04
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.035 @ V
GS
=
10 V
6.2
0.053 @ V
GS
=
4.5 V
5.0
(1, 2, 5, 6) D
(4) S
(3) G
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information:
Si3483DV-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.2
4.7
T
A
= 70 C
4.9
3.7
A
Pulsed Drain Current
I
DM
25
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.95
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.14
W
T
A
= 70 C
1.3
0.73
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
45
62.5
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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