參數(shù)資料
型號(hào)： Si1563EDH
廠商： Vishay Intertechnology,Inc.
英文描述： Complementary 20-V (D-S) Low-Threshold MOSFET
中文描述： 補(bǔ)充20 - V（下副秘書長）低閾值MOSFET的
文件頁數(shù)： 1/8頁
文件大小： 66K
代理商： SI1563EDH
FEATURES
TrenchFET Power MOSFETS: 1.8-V Rated
Thermally Enhanced SC-70 Package
Fast Switching
APPLICATIONS
Load Switch for Portable Devices
Si1563DH
Vishay Siliconix
New Product
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
www.vishay.com
1
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.280 @ V
GS
= 4.5 V
1.28
N-Channel
20
0.360 @ V
GS
= 2.5 V
1.13
0.450 @ V
GS
= 1.8 V
1.00
0.490 @ V
GS
= -4.5 V
-1.00
P-Channel
-20
0.750 @ V
GS
= -2.5 V
-0.81
1.10 @ V
GS
= -1.8 V
-0.67
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
S
1
G
1
D
2
D
1
G
2
S
2
Marking Code
EB
XX
Lot Traceability
and Date Code
Part # Code
Y
P-Channel
D
1
S
1
G
1
N-Channel
D
2
S
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
-20
Gate-Source Voltage
V
GS
8
8
V
T
A
= 25 C
1.28
1.13
- 1.00
-0.88
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
0.92
0.81
-0.72
-0.63
Pulsed Drain Current
I
DM
4.0
-3.0
A
Continuous Source Current (Diode Conduction)
a
I
S
0.61
0.48
-0.61
-0.48
T
A
= 25 C
0.74
0.57
0.30
0.57
Maximum Power Dissipation
a
T
A
= 85 C
P
D
0.38
0.30
0.16
0.3
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
130
170
Maximum Junction-to-Ambient
a
Steady State
R
thJA
170
220
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
80
100
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI1900DL Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI1901DL P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI1902DL Dual N-Channel 20-V (D-S) MOSFET
SI1903DL Dual P-Channel 2.5-V (G-S) MOSFET
SI1905DL Dual P-Channel 1.8-V (G-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1563EDH_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary 20-V (D-S) Low-Threshold MOSFET
SI1563EDH-E3 功能描述:MOSFET 20V 1.28/1.0 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1563EDH-T1 功能描述:MOSFET 20V 1.28/1.0 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1563EDH-T1-E3 功能描述:MOSFET 20V 1.28/1.0 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1563EDH-T1-E3 制造商:Vishay Siliconix 功能描述:DUAL N/P CHANNEL MOSFET 20V SC-70
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*