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參數(shù)資料
| 型號： | SI1563DH |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complementary 20-V (D-S) Low-Threshold MOSFET |
| 中文描述： | 補充20 - V（下副秘書長）低閾值MOSFET的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | SI1563DH |
FEATURES
TrenchFET Power MOSFETS: 1.8-V Rated
Thermally Enhanced SC-70 Package
Fast Switching
APPLICATIONS
Load Switch for Portable Devices
Si1563DH
Vishay Siliconix
New Product
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
www.vishay.com
1
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.280 @ V
GS
= 4.5 V
1.28
N-Channel
20
0.360 @ V
GS
= 2.5 V
1.13
0.450 @ V
GS
= 1.8 V
1.00
0.490 @ V
GS
= -4.5 V
-1.00
P-Channel
-20
0.750 @ V
GS
= -2.5 V
-0.81
1.10 @ V
GS
= -1.8 V
-0.67
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
S
1
G
1
D
2
D
1
G
2
S
2
Marking Code
EB
XX
Lot Traceability
and Date Code
Part # Code
Y
P-Channel
D
1
S
1
G
1
N-Channel
D
2
S
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
-20
Gate-Source Voltage
V
GS
8
8
V
T
A
= 25 C
1.28
1.13
- 1.00
-0.88
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
0.92
0.81
-0.72
-0.63
Pulsed Drain Current
I
DM
4.0
-3.0
A
Continuous Source Current (Diode Conduction)
a
I
S
0.61
0.48
-0.61
-0.48
T
A
= 25 C
0.74
0.57
0.30
0.57
Maximum Power Dissipation
a
T
A
= 85 C
P
D
0.38
0.30
0.16
0.3
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
130
170
Maximum Junction-to-Ambient
a
Steady State
R
thJA
170
220
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
80
100
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1563DH_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary 20-V (D-S) Low-Threshold MOSFET |
| SI1563DH_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary 20 V (D-S) Low-Threshold MOSFET |
| SI1563DH-T1 | 功能描述:MOSFET 20V 1.28/1.0A 0.48W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1563DH-T1-E3 | 功能描述:MOSFET 20V 1.28/1.0A 16 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1563DH-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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