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參數(shù)資料
| 型號： | SI1417EDH |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 12-V (D-S) MOSFET |
| 中文描述： | P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 41K |
| 代理商： | SI1417EDH |
Si1417EDH
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71412
S-03187
—
Rev. A, 05-Mar-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
0.45
V
V
DS
= 0 V, V
GS
=
4.5 V
1.5
A
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
10
mA
V
DS
=
–
9.6 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
9.6 V, V
GS
= 0 V, T
J
= 85 C
–
5
A
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
4.5 V
–
4
A
V
GS
=
–
4.5 V, I
D
=
–
3.3 A
0.070
0.085
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
2.5 V, I
D
=
–
2.9
A
0.095
0.115
V
GS
=
–
1.8 V, I
D
=
–
1.0
A
0.133
0.160
Forward Transconductance
a
g
fs
V
DS
=
–
10 V, I
D
=
–
3.3 A
8
S
Diode Forward Voltage
a
V
SD
I
S
=
–
1.4 A, V
GS
= 0 V
–
0.80
–
1.1
V
Dynamic
b
Total Gate Charge
Q
g
5.8
8
Gate-Source Charge
Q
gs
V
DS
=
–
6 V,
V
GS
=
–
4.5 V, I
D
=
–
3.3 A
1.3
nC
Gate-Drain Charge
Q
gd
1.5
Turn-On Delay Time
t
d(on)
0.60
1.0
Rise Time
t
r
V
=
–
6 V, R
= 6
–
1 A, V
GEN
=
–
4.5 V, R
G
= 6
1.4
2.1
Turn-Off Delay Time
t
d(off)
I
D
4.9
7.5
s
Fall Time
t
f
4.9
7.5
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0.01
100
10,000
Gate Current vs. Gate-Source Voltage
0
3
6
9
12
15
18
Gate-Current vs. Gate-Source Voltage
V
GS
–
Gate-to-Source Voltage (V)
0.1
1
10
1,000
V
GS
–
Gate-to-Source Voltage (V)
–
I
G
A
0
3
6
9
12
T
J
= 25 C
T
J
= 150 C
–
I
G
8
6
4
2
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1417EDH_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
| SI1417EDH-T1 | 功能描述:MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1417EDH-T1-E3 | 功能描述:MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1417EDH-T1-GE3 | 功能描述:MOSFET P-CH 12V SC-70-6 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| SI1419DH | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 200-V (D-S) MOSFET |
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