- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368614 > SI1555DL (Vishay Intertechnology,Inc.) Complementary Low-Threshold MOSFET Pair PDF資料下載
參數(shù)資料
| 型號： | SI1555DL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complementary Low-Threshold MOSFET Pair |
| 中文描述： | 互補低閾值組MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | SI1555DL |
Si1555DL
Vishay Siliconix
Document Number: 71079
S-21374—Rev. C, 12-Aug-02
www.vishay.com
1
Complementary Low-Threshold MOSFET Pair
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.385 @ V
GS
= 4.5 V
0.70
N-Channel
20
0.630 @ V
GS
= 2.5 V
0.54
0.600 @ V
GS
= -4.5 V
0.60
P-Channel
-8
0.850 @ V
GS
= -2.5 V
0.50
1.200 @ V
GS
= -1.8 V
0.42
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
S
1
G
1
D
2
D
1
G
2
S
2
Marking Code
RB
XX
Lot Traceability
and Date Code
Part # Code
Y
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
-8
Gate-Source Voltage
V
GS
12
8
V
T
A
= 25 C
0.70
0.66
0.60
0.57
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
0.50
0.48
0.43
0.41
Pulsed Drain Current
I
DM
1.0
A
Continuous Source Current (Diode Conduction)
a
I
S
0.25
0.23
-0.25
-0.23
T
A
= 25 C
0.30
0.27
0.30
0.27
Maximum Power Dissipation
a
T
A
= 85 C
P
D
0.16
0.14
0.16
0.14
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
360
415
Maximum Junction-to-Ambient
a
Steady State
R
thJA
400
460
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
300
350
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI1917EDH | Dual P-Channel 12-V (D-S) MOSFET |
| SI2302ADS | N-Channel MOSFET, 20V(D-S) |
| Si2302ADS-T1 | N-Channel 1.25-W, 2.5-V MOSFET |
| Si2307BDS | P-Channel 30-V (D-S) MOSFET |
| SI2307DS | P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1555DL_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary Low-Threshold MOSFET Pair |
| SI1555DL_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary Low-Threshold MOSFET Pair |
| SI1555DL-T1 | 功能描述:MOSFET 20/8 0.7/0.6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1555DLT1E3 | 制造商:VISHAY 功能描述:MOSFET |
| SI1555DL-T1-E3 | 功能描述:MOSFET 20/8 0.7/0.6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。