參數(shù)資料
型號(hào)： SI1555DL
廠商： Vishay Intertechnology,Inc.
英文描述： Complementary Low-Threshold MOSFET Pair
中文描述： 互補(bǔ)低閾值組MOSFET
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 60K
代理商： SI1555DL
Si1555DL
Vishay Siliconix
www.vishay.com
2
Document Number: 71079
S-21374
—
Rev. C, 12-Aug-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.6
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
P-Ch
-0.45
V
V
DS
= 0 V, V
GS
=
12 V
N-Ch
100
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
P-Ch
100
nA
V
DS
= 16 V, V
GS
= 0 V
N-Ch
1
V
DS
= -6.4 V, V
GS
= 0 V
P-Ch
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
N-Ch
5
A
V
DS
= -6.4 V, V
GS
= 0 V, T
J
= 85 C
P-Ch
-5
V
DS
5 V, V
GS
= 4.5 V
N-Ch
1.0
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
P-Ch
-1.0
A
V
GS
= 4.5 V, I
D
= 0.66 A
N-Ch
0.320
0.385
V
GS
= -4.5 V, I
D
= -0.57 A
P-Ch
0.510
0.600
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 0.40 A
N-Ch
0.560
0.630
V
GS
= -2.5 V, I
D
= -0.48 A
P-Ch
0.720
0.850
V
GS
= -1.8 V, I
D
= -0.20 A
P-Ch
1.00
1.200
V
DS
= 10 V, I
D
= 0.66 A
N-Ch
1.5
Forward Transconductance
a
g
fs
V
DS
= -4 V, I
D
= -0.57 A
P-Ch
1.2
S
I
S
= 0.23 A, V
GS
= 0 V
N-Ch
0.8
1.2
Diode Forward Voltage
a
V
SD
I
S
= -0.23 A, V
GS
= 0 V
P-Ch
-0.8
-1.2
V
Dynamic
b
N-Ch
0.8
1.2
Total Gate Charge
Q
g
N-Channel
P-Ch
1.5
2.3
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 0.66 A
N-Ch
0.06
Gate-Source Charge
Q
gs
P-Channel
P-Ch
0.17
nC
V
DS
= -4 V,
V
GS
= -4.5 V, I
D
= -0.57 A
N-Ch
0.30
Gate-Drain Charge
Q
gd
P-Ch
0.16
N-Ch
10
20
Turn-On Delay Time
t
d(on)
P-Ch
6
12
N-Channel
N-Ch
16
30
Rise Time
t
r
V
= 10 V, R
= 20
0.5 A, V
GEN
= 4.5 V, R
G
= 6
I
D
P-Ch
25
50
P-Channel
V
= -4 V, R
= 8
-0.5 A, V
GEN
N-Ch
10
20
Turn-Off Delay Time
t
d(off)
I
D
= -4.5 V, R = 6
P-Ch
10
20
ns
N-Ch
10
20
Fall Time
t
f
P-Ch
10
20
Source-Drain
Reverse Recovery Time
I
F
= 0.23 A, di/dt = 100 A/ s
N-Ch
20
40
t
rr
I
F
= -0.23 A, di/dt = 100 A/ s
P-Ch
20
40
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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