參數(shù)資料
型號: SI1555DL
廠商: Vishay Intertechnology,Inc.
英文描述: Complementary Low-Threshold MOSFET Pair
中文描述: 互補(bǔ)低閾值組MOSFET
文件頁數(shù): 3/7頁
文件大?。?/td> 60K
代理商: SI1555DL
Si1555DL
Vishay Siliconix
Document Number: 71079
S-21374
Rev. C, 12-Aug-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
NCHANNEL
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 5 thru 2.5 V
T
C
= 125 C
-55 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1.5 V
1 V
0
20
40
60
80
100
0
4
8
12
16
20
-
r
D
)
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 0.66 A
I
D
- Drain Current (A)
V
GS
= 4.5 V
I
D
= 0.66 A
V
GS
= 2.5 V
Gate Charge
On-Resistance vs. Drain Current
-
Q
g
- Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
(
-
r
D
)
V
GS
= 4.5 V
相關(guān)PDF資料
PDF描述
SI1917EDH Dual P-Channel 12-V (D-S) MOSFET
SI2302ADS N-Channel MOSFET, 20V(D-S)
Si2302ADS-T1 N-Channel 1.25-W, 2.5-V MOSFET
Si2307BDS P-Channel 30-V (D-S) MOSFET
SI2307DS P-Channel 30-V (D-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1555DL_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary Low-Threshold MOSFET Pair
SI1555DL_10 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary Low-Threshold MOSFET Pair
SI1555DL-T1 功能描述:MOSFET 20/8 0.7/0.6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1555DLT1E3 制造商:VISHAY 功能描述:MOSFET
SI1555DL-T1-E3 功能描述:MOSFET 20/8 0.7/0.6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube