- 您現(xiàn)在的位置：買賣IC網 > PDF目錄368614 > SI1426DH (Vishay Intertechnology,Inc.) Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PDF資料下載
參數(shù)資料
| 型號： | SI1426DH |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | SI1426DH |
TrenchFET Power MOSFET
Thermally Enhanced SC-70 Package
PWM Optimized
Boost Converter in Portable Devices
– Low Gate Charge (3 nC)
Low Current Synchronous Rectifier
Si1426DH
Vishay Siliconix
New Product
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.075 @ V
GS
= 10 V
3.6
30
0.115 @ V
GS
= 4.5 V
2.9
Marking Code
AC
XX
Lot Traceability
and Date Code
Part # Code
Y
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
3.6
2.8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
2.6
2.1
Pulsed Drain Current
I
DM
10
A
Continuous Diode Current (Diode Conduction)
a
I
S
1.3
0.8
T
A
= 25 C
1.6
1.0
Maximum Power Dissipation
a
T
A
= 85 C
P
D
0.8
0.5
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
60
80
Maximum Junction-to-Ambient
a
Steady State
R
thJA
100
125
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
34
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI1555DL | Complementary Low-Threshold MOSFET Pair |
| SI1917EDH | Dual P-Channel 12-V (D-S) MOSFET |
| SI2302ADS | N-Channel MOSFET, 20V(D-S) |
| Si2302ADS-T1 | N-Channel 1.25-W, 2.5-V MOSFET |
| Si2307BDS | P-Channel 30-V (D-S) MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI1426DH_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI1426DH_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI1426DH_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SI1426DH-T1-E3 | 功能描述:MOSFET 30V 3.6A 0.075Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1426DH-T1-GE3 | 功能描述:MOSFET 30V 3.6A .075ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。