參數(shù)資料
型號: SI1404DH
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: N-Channel 25-V (D-S) MOSFET
中文描述: N溝道25V(D-S)MOSFET
文件頁數(shù): 2/3頁
文件大?。?/td> 178K
代理商: SI1404DH
SPICE Device Model Si1404DH
Vishay Siliconix
www.vishay.com
2
Document Number: 73120
27-Aug-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
11
A
V
GS
= 4.5 V, I
D
= 1.57 A
0.28
0.28
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 1.39 A
0.33
0.36
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 0.75 A
2.3
1.5
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
= 1.23 A, V
GS
= 0 V
0.76
0.85
V
Total Gate Charge
Q
g
1
1.3
Gate-Source Charge
Q
gs
0.31
0.31
Gate-Drain Charge
Q
gd
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 1.57 A
0.49
0.49
nC
Turn-On Delay Time
t
d(on)
12
11
Rise Time
t
r
15
18
Turn-Off Delay Time
t
d(off)
19
17
Fall Time
t
f
V
DD
= 15 V, R
L
= 20
I
D
0.75 A, V
GEN
= 4.5 V, R
G
= 6
21
11
ns
Notes
a. Pulse test; pulse width
300
μ
s, duty cycle
2%.
b. Guaranteed by design, not subject to production testing.
相關(guān)PDF資料
PDF描述
SI1407DL P-Channel 1.8-V (G-S) MOSFET
SI1410EDH N-Channel 20-V (D-S) MOSFET
SI1417EDH P-Channel 12-V (D-S) MOSFET
SI1426DH Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI1555DL Complementary Low-Threshold MOSFET Pair
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1405BDH 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET
SI1405BDH-T1-E3 功能描述:MOSFET 8.0V 1.6A 2.27W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1405BDH-T1-GE3 功能描述:MOSFET P-CH 8V SC-70-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
SI1405DL 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET
SI1405DL-T1 功能描述:MOSFET 8V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube