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參數(shù)資料
| 型號： | SI1407DL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | P通道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 64K |
| 代理商： | SI1407DL |
Si1407DL
Vishay Siliconix
New Product
Document Number: 71074
S-01561—Rev. C, 17-Jul-00
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel 1.8-V (G-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.130 @ V
GS
= –4.5 V
–1.8
–12
0.170 @ V
GS
= –2.5 V
–1.5
0.225 @ V
GS
= –1.8 V
–1.3
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Marking Code
OC
XX
Lot Traceability
and Date Code
Part # Code
Y
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
–1.8
–1.6
A
T
A
= 85 C
–1.4
–1.2
Pulsed Drain Current
I
DM
–5
Continuous Diode Current (Diode Conduction)
a
I
S
–0.8
–0.8
Maximum Power Dissipation
a
T
A
= 25 C
P
D
0.625
0.568
W
T
A
= 85 C
0.400
0.295
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
5 sec
R
thJA
165
200
C/W
Steady State
180
220
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
105
130
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1407DL-T1 | 功能描述:MOSFET 12V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1407DL-T1-E3 | 功能描述:MOSFET 12V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1410EDH | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI1410EDH_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI1410EDH_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET |
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