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參數(shù)資料
| 型號： | SI1032R |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI1032R |
Si1032R/X
Vishay Siliconix
www.vishay.com
2
Document Number: 71172
S-40574—Rev. C, 29-Mar-04
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.40
0.7
1.2
V
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
2.8 V
0.5
1.0
V
DS
= 0 V, V
GS
=
4.5
V
1.0
3.0
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
10
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
250
mA
V
GS
= 4.5 V, I
D
= 200 mA
5
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 175 m A
7
V
GS
= 1.8 V, I
D
= 150 m A
V
DS
= 1.5
V, I
D
= 40 mA
9
10
Forward Transconductance
a
g
fs
V
DS
= 10
V, I
D
= 200 mA
0.5
S
Diode Forward Voltage
a
V
SD
I
S
= 150 mA, V
GS
= 0 V
1.2
V
Dynamic
b
Total Gate Charge
Q
g
750
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 150 mA
75
pC
Gate-Drain Charge
Q
gd
225
Turn-On Delay Time
t
d(on)
50
Rise Time
t
r
V
= 10 V, R
= 47
200 mA, V
GEN
= 4.5 V, R
G
= 10
25
ns
Turn-Off Delay Time
t
d(off)
I
D
50
Fall Time
t
f
25
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (T
A
= 25 C UNLESS NOTED)
0
100
200
300
400
500
600
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
V
GS
= 5 thru 1.8 V
V
GS
Gate-to-Source Voltage (V)
I
T
J
=
55 C
125 C
25 C
1 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI1032R-T1 | N-Channel 20-V (D-S) MOSFET |
| SI1032X-T1 | N-Channel 20-V (D-S) MOSFET |
| SI1034X | N-Channel 20-V (D-S) MOSFET |
| SI1035X | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| SI1037X | P-Channel 1.8-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1032R | 制造商:Vishay Siliconix 功能描述:MOSFET N SC-75A |
| SI1032R_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 1.5-V (G-S) MOSFET |
| SI1032R-T1 | 功能描述:MOSFET 20V 0.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1032R-T1-E3 | 功能描述:MOSFET 20V 0.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1032R-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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