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參數(shù)資料
| 型號： | SI1013X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | P通道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SI1013X |
Si1013R/X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71167
S-02464
—
Rev. A, 25-Oct-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
4.5
V
1
2
A
V
DS
=
–
16 V, V
GS
= 0 V
–
0.3
–
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
16 V, V
GS
= 0 V, T
J
= 85 C
–
5
A
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
4.5 V
–
700
mA
V
GS
=
–
4.5 V, I
D
=
–
350 mA
0.8
1.2
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
2.5 V, I
D
=
–
300 m A
1.2
1.6
V
GS
=
–
1.8 V, I
D
=
–
150 m A
1.8
2.7
Forward Transconductance
a
g
fs
V
DS
=
–
10
V, I
D
=
–
250 mA
0.4
S
Diode Forward Voltage
a
V
SD
I
S
=
–
150 mA, V
GS
= 0 V
–
0.8
–
1.2
V
Dynamic
b
Total Gate Charge
Q
g
1500
Gate-Source Charge
Q
gs
V
DS
=
–
10 V,
V
GS
=
–
4.5 V, I
D
=
–
250 mA
150
pC
Gate-Drain Charge
Q
gd
450
Turn-On Delay Time
t
d(on)
5
Rise Time
t
r
V
DD
=
–
10 V, R
L
= 47
–
200 mA, V
GEN
=
–
4.5 V, R
G
= 10
9
Turn-Off Delay Time
t
d(off)
I
D
35
ns
Fall Time
t
f
11
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
0
200
400
600
800
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 5 thru 3 V
T
J
=
–
55 C
125 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
1.8 V
2.5 V
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