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參數(shù)資料
| 型號(hào)： | SGM2016AP |
| 廠商： | Sony Corporation |
| 英文描述： | GaAs N-channel Dual-Gate MES FET |
| 中文描述： | 砷化鎵N溝道雙柵場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 57K |
| 代理商： | SGM2016AP |
– 4 –
SGM2016AM/AP
S-parameter vs. Frequency Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
(Z
0
= 50
)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.969
0.966
0.964
0.961
0.957
0.955
0.955
0.954
0.954
0.953
0.952
0.949
0.947
0.946
0.945
0.945
0.945
0.945
0.945
0.945
–1.3
–3.0
–4.2
–6.1
–7.2
–8.8
–9.9
–11.5
–12.8
–14.4
–15.6
–17.2
–18.2
–20.0
–21.3
–22.9
–24.1
–25.8
–27.3
–28.7
S22
MAG
ANG
0.002
0.003
0.005
0.006
0.007
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
95.0
87.9
83.6
77.7
82.1
76.3
76.8
78.7
74.4
82.6
79.3
72.4
79.0
81.5
80.3
83.7
90.1
98.4
109.0
113.0
S12
MAG
ANG
2.521
2.515
2.499
2.480
2.451
2.420
2.391
2.362
2.331
2.294
2.254
2.216
2.182
2.153
2.118
2.076
2.038
2.005
1.963
1.929
174.2
168.1
162.3
156.3
150.6
144.8
139.4
133.9
128.5
122.9
117.7
112.4
107.3
102.1
96.9
91.8
86.6
81.4
76.4
71.5
S21
MAG
ANG
0.999
0.994
0.981
0.969
0.952
0.935
0.917
0.896
0.877
0.850
0.822
0.797
0.769
0.744
0.717
0.692
0.668
0.641
0.617
0.589
–3.8
–7.9
–11.8
–16.0
–20.0
–24.1
–27.8
–31.3
–34.7
–38.0
–40.9
–44.0
–46.8
–49.7
–52.4
–54.9
–57.5
–59.6
–61.6
–63.4
S11
MAG
ANG
Noise Figure Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
7.5
10.8
13.9
16.8
19.5
22.0
24.5
26.8
29.1
31.4
33.8
36.1
38.6
41.2
43.9
46.8
50.0
53.4
57.0
40.0
39.5
39.0
38.5
37.9
37.4
36.8
36.1
35.5
34.8
34.1
33.4
32.6
31.9
31.0
30.2
29.3
28.5
27.5
MAG
Rn
(
)
0.73
0.79
0.85
0.92
0.99
1.05
1.11
1.18
1.25
1.32
1.39
1.46
1.53
1.61
1.68
1.76
1.84
1.92
2.00
0.94
0.90
0.87
0.84
0.81
0.78
0.75
0.72
0.70
0.67
0.65
0.63
0.60
0.58
0.56
0.54
0.52
0.50
0.48
Gamma Optimum
NFmin
(dB)
ANG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SGM2016 | GaAs N-channel Dual-Gate MES FET |
| SGM2016AM | GaAs N-channel Dual-Gate MES FET |
| SGM2016AN | GaAs N-channel Dual-Gate MES FET |
| SGM2016M | GaAs N-channel Dual-Gate MES FET |
| SGM2016P | GaAs N-channel Dual-Gate MES FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGM2016M | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET |
| SGM2016M-T7 | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| SGM2016P | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET |
| SGM2019-2.8YN5G/TR | 制造商:SG Micro 功能描述:Single Channel 300mA RF-Linear LDO Regulators |
| SGM2022 | 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Dual, Low Dropout, 150mA RF - Linear Regulators |
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