參數(shù)資料
型號(hào): SGM2016AP
廠商: Sony Corporation
英文描述: GaAs N-channel Dual-Gate MES FET
中文描述: 砷化鎵N溝道雙柵場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 57K
代理商: SGM2016AP
– 2 –
SGM2016AM/AP
0
2
4
6
0
10
20
30
40
V
DS
– Drain to source voltage [V]
I
D
I
D
vs. V
DS
V
G1S
= 0V
–0.6V
–0.3V
–0.9V
(V
G2S
= 1.5V)
1
3
5
–2.0
–1.5
–1.0
–0.5
0
0
10
15
20
25
V
G1S
– Gate 1 to source voltage [V]
I
D
I
D
vs. V
G1S
(V
DS
= 5V)
1.0V
0.5V
0V
–0.5V
5
–1.0V
V
G2S
= 1.5V
Typical Characteristics
(Ta = 25°C)
Electrical Characteristics
(Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
I
DSX
I
G1SS
I
G2SS
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
gm
Ciss
Crss
NF
Ga
V
DS
= 12V
V
G1S
= –4V
V
G2S
= 0V
V
G1S
= –4.5V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= –4.5V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 5V
I
D
= 100μA
V
G2S
= 0V
V
DS
= 5V
I
D
= 100μA
V
G1S
= 0V
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 900MHz
10
20
17
30
0.9
25
1.2
21
50
–8
–8
35
–2.5
–2.5
2.0
40
2.0
μA
μA
μA
mA
V
V
ms
pF
fF
dB
dB
Symbol
Conditions
Min.
Typ.
Max.
Unit
相關(guān)PDF資料
PDF描述
SGM2016 GaAs N-channel Dual-Gate MES FET
SGM2016AM GaAs N-channel Dual-Gate MES FET
SGM2016AN GaAs N-channel Dual-Gate MES FET
SGM2016M GaAs N-channel Dual-Gate MES FET
SGM2016P GaAs N-channel Dual-Gate MES FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGM2016M 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET
SGM2016M-T7 制造商:Panasonic Industrial Company 功能描述:DIODE
SGM2016P 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET
SGM2019-2.8YN5G/TR 制造商:SG Micro 功能描述:Single Channel 300mA RF-Linear LDO Regulators
SGM2022 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Dual, Low Dropout, 150mA RF - Linear Regulators