參數(shù)資料
型號(hào): SGM2016AP
廠商: Sony Corporation
英文描述: GaAs N-channel Dual-Gate MES FET
中文描述: 砷化鎵N溝道雙柵場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 57K
代理商: SGM2016AP
– 3 –
SGM2016AM/AP
–2.0
–1.5
–1.0
–0.5
0
0
20
30
40
50
V
G1S
– Gate 1 to source voltage [V]
g
gm vs. V
G1S
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
10
–2.0
–1.5
–1.0
–0.5
0
0
10
15
20
25
V
G2S
– Gate 2 to source voltage [V]
I
D
I
D
vs. V
G2S
(V
DS
= 5V)
V
G1S
= 0V
–0.4V
–0.6V
–1.0V
–0.2V
–0.8V
5
0
0.8
1.6
2.2
0
1.0
1.5
2.5
3.0
f – Frequency [GHz]
N
NF, Ga vs. f
0.5
0.4
1.2
2.0
2.0
5
15
20
30
35
10
25
G
(V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
Ga
NFmin
0.6
1.4
0.2
1.0
1.8
0
4
8
12
16
20 22
0
1.0
1.5
2.5
3.0
I
D
– Drain current [mA]
N
NF, Ga vs. I
D
(V
DS
= 5V, V
G2S
= 1.5V, f = 900MHz)
0.5
2
6
10
14
2.0
18
0
10
15
25
30
5
20
G
Ga
NF
–1.0
V
G1S
– Gate 1 to source voltage [V]
–0.6
–0.2
0
0.2
0
2
3
4
5
N
NF vs. V
G1S
1
–1.2
–0.8
–0.4
V
G2S
= 0.5V
1.0V
1.5V
(V
DS
= 5V, f = 900MHz)
–0.6
–0.2
0
0.2
0
10
15
25
30
V
G1S
– Gate 1 to source voltage [V]
G
Ga vs. V
G1S
5
–1.2
–0.8
–0.4
20
–1.0
(V
DS
= 5V, f = 900MHz)
V
G2S
= 1.5V
1.0V
0.5V
相關(guān)PDF資料
PDF描述
SGM2016 GaAs N-channel Dual-Gate MES FET
SGM2016AM GaAs N-channel Dual-Gate MES FET
SGM2016AN GaAs N-channel Dual-Gate MES FET
SGM2016M GaAs N-channel Dual-Gate MES FET
SGM2016P GaAs N-channel Dual-Gate MES FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGM2016M 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET
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SGM2016P 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual-Gate MES FET
SGM2019-2.8YN5G/TR 制造商:SG Micro 功能描述:Single Channel 300mA RF-Linear LDO Regulators
SGM2022 制造商:SGMICRO 制造商全稱:SGMICRO 功能描述:Dual, Low Dropout, 150mA RF - Linear Regulators