953
32072H–AVR32–10/2012
AT32UC3A3
35.5.3.5
MEMORY_BLOCK_ACCESS
This instruction allows access to the entire SAB data area. Up to 32 bits of data is accessed at a
time, while the address is sequentially incremented from the previously used address.
In this mode, the SAB address, size, and access direction is not provided with each access.
Instead, the previous address is auto-incremented depending on the specified size and the pre-
viou s op era t ion rep e a t ed . Th e ad dr ess m u st b e se t u p in a d va nce with
MEMORY_SIZE_ACCESS or MEMORY_WORD_ACCESS. It is allowed, but not required, to
shift data after shifting the address.
This instruction is primarily intended to speed up large quantities of sequential word accesses. It
is possible to use it also for byte and halfword accesses, but the overhead in this is case much
larger as 32 bits must still be shifted for each access.
The following sequence should be used:
1.
Use the MEMORY_SIZE_ACCESS or MEMORY_WORD_ACCESS to read or write the
first location.
2.
Return to Run-Test/Idle.
3.
Select the IR Scan path.
4.
In Capture-IR: The IR output value is latched into the shift register.
5.
In Shift-IR: The instruction register is shifted by the TCK input.
6.
Return to Run-Test/Idle.
7.
Select the DR Scan path. The address will now have incremented by 1, 2, or 4 (corre-
sponding to the next byte, halfword, or word location).
8.
In Shift-DR: For a read operation, scan out the contents of the next addressed location.
For a write operation, scan in the new contents of the next addressed location.
9.
Go to Update-DR.
10. If the block access is not complete, return to Select-DR Scan and repeat the access.
11. If the block access is complete, return to Run-Test/Idle.
For write operations, 32 data bits must be provided, or the result will be undefined. For read
operations, shifting may be terminated once the required number of bits have been acquired.
DR output value (Address phase)
xxxxxxxx xxxxxxxx xxxxxxxx xxxxxxxx xeb
DR output value (Data read phase)
xeb dddddddd dddddddd dddddddd dddddddd
DR output value (Data write phase)
xxx xxxxxxxx xxxxxxxx xxxxxxxx xxxxxxeb
Table 35-20. MEMORY_WORD_ACCESS Details (Continued)
Instructions
Details
Table 35-21. MEMORY_BLOCK_ACCESS Details
Instructions
Details
IR input value
10010 (0x12)
IR output value
peb01
DR Size
34 bits
DR input value (Data read phase)
xxxxxxxx xxxxxxxx xxxxxxxx xxxxxxxx xx