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參數(shù)資料
| 型號： | S29PL129N70GAIW03 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁模式閃存 |
| 文件頁數(shù)： | 78/85頁 |
| 文件大?。?/td> | 940K |
| 代理商： | S29PL129N70GAIW03 |
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76
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
For further information, please see the CFI Specification (see JEDEC publications JEP137-A and
J ESD68.01and CFI Publication 100). Please contact your sales office for copies of these
documents.
Table 12.3 CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string
QRY
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 12.4 System Interface String
Addresses
Data
Description
1Bh
0027h
V
Min. (write/erase)
D7 – D4: volt, D3 – D0: 100 millivolt
1Ch
0036h
V
Max. (write/erase)
D7 – D4: volt, D3 – D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
1Eh
0000h
1Fh
0006h
20h
0009h
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
21h
000Bh
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0003h
Max. timeout for byte/word write 2
N
times typical
24h
0003h
Max. timeout for buffer write 2
N
times typical
25h
0002h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 12.5 Device Geometry Definition
Addresses
Data
Description
27h
0019h (PL256N)
0018h (PL127N)
0018h (PL129N)
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface description (see CFI publication 100)
2Ah
2Bh
0006h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0003h
0000h
0000h
0001h
Erase Block Region 1 Information
(see the CFI specification or CFI publication 100)
31h
007Dh (PL256N)
003Dh (PL127N)
003Dh (PL129N)
Erase Block Region 2 Information
(see the CFI specification or CFI publication 100)
32h
33h
34h
0000h
0000h
0004h
35h
36h
37h
38h
0003h
0000h
0000h
0001h
Erase Block Region 3 Information
(see the CFI specification or CFI publication 100)
相關PDF資料 |
PDF描述 |
|---|---|
| S29PL129N80FAW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW00 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N70GAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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