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參數(shù)資料
| 型號(hào)： | S29PL129N70GAIW03 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁模式閃存 |
| 文件頁數(shù)： | 25/85頁 |
| 文件大?。?/td> | 940K |
| 代理商： | S29PL129N70GAIW03 |
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November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
23
P r e l i m i n a r y
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. Each bank is ready to read array data after completing an Embedded
Program or Embedded Erase algorithm. All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever
happens first.
Reads from the memory array may be performed in conjunction with the Erase Suspend and Pro-
gram Suspend features. After the device accepts an Erase Suspend command, the corresponding
bank enters the erase-suspend-read mode, after which the system can read data from any non-
erase-suspended sector within the same bank. The system can read array data using the standard
read timing, except that if it reads at an address within erase-suspended sectors, the device out-
puts status data. After completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the same exception. After the device accepts a Pro-
gram Suspend command, the corresponding bank enters the program-suspend-read mode, after
which the system can read data from any non-program-suspended sector within the same bank.
7.3
Autoselect
The Autoselect mode allows the host system to access manufacturer and device identification,
and verify sector protection, through identifier codes output from the internal register (separate
from the memory array) on DQ15-DQ0. This mode is primarily intended to allow equipment to
automatically match a device to be programmed with its corresponding programming algorithm.
When verifying sector protection, the sector address must appear on the appropriate highest
order address bits (see
Table 7.5)
. The remaining address bits are don't care. When all necessary
bits have been set as required, the programming equipment can then read the corresponding
identifier code on DQ15-DQ0.
The Autoselect codes can also be accessed in-system through the command register. Note that if
a Bank Address (BA) on the four uppermost address bits is asserted during the third write cycle
of the Autoselect command, the host system can read Autoselect data from that bank and then
immediately read array data from the other bank, without exiting the Autoselect mode.
To access the Autoselect codes, the host system must issue the Autoselect command.
The Autoselect command sequence can be written to an address within a bank that is either
in the read or erase-suspend-read mode.
The Autoselect command cannot be written while the device is actively programming or eras-
ing in the other bank.
Autoselect does not support simultaneous operations or page modes.
The system must write the reset command to return to the read mode (or erase-suspend-
read mode if the bank was previously in Erase Suspend).
Table 7.3 Word Selection within a Page
Word
A2
A1
A0
Word 0
0
0
0
Word 1
0
0
1
Word 2
0
1
0
Word 3
0
1
1
Word 4
1
0
0
Word 5
1
0
1
Word 6
1
1
0
Word 7
1
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129N80FAW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW00 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N70GAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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