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參數(shù)資料
| 型號： | S29PL129N70GAIW03 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁模式閃存 |
| 文件頁數(shù)： | 32/85頁 |
| 文件大小： | 940K |
| 代理商： | S29PL129N70GAIW03 |
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30
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
Figure 7.2 Write Buffer Programming Operation
7.4.3 Sector Erase
The sector erase function erases one or more sectors in the memory array. (See
Table 12.1
, and
Figure 7.3
.) The device does not require the system to preprogram prior to erase. The Embedded
Erase algorithm automatically programs and verifies the entire memory for an all zero data pat-
tern prior to electrical erase. The system is not required to provide any controls or timings during
these operations.
After the command sequence is written, a sector erase time-out of no less than t
SEA
occurs. Dur-
ing the time-out period, additional sector addresses and sector erase commands can be written.
Loading the sector erase buffer can be done in any sequence, and the number of sectors can be
from one sector to all sectors. The time between these additional cycles must be less than t
SEA
.
Any sector erase address and command following the exceeded time-out (t
SEA
) may or may not
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Issue
Write Buffer Load Command:
Address 555h, Data 25h
Load Word Count to Program
Program Data to Address:
SA = wc
Unlock Cycle 1
Unlock Cycle 2
wc = number of words – 1
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
wc = 0
Write Buffer
Abort Desired
Write Buffer
Abort
Polling Status
= Done
Error
FAIL. Issue reset command
to return to read array mode.
Write to a Different
Sector Address to Cause
Write Buffer Abort
PASS. Device is in
read mode.
Confirm command:
SA 29h
Wait 4
μ
s
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Write Next Word,
Decrement wc:
PA data , wc = wc – 1
RESET. Issue Write Buffer
Abort Reset Command
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| S29PL129N80FAW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW00 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N70GAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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