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參數(shù)資料
| 型號(hào)： | S29PL129N70GAIW03 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫(xiě)，頁(yè)模式閃存 |
| 文件頁(yè)數(shù)： | 31/85頁(yè) |
| 文件大?。?/td> | 940K |
| 代理商： | S29PL129N70GAIW03 |
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November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
29
P r e l i m i n a r y
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed. Write buffer programming is approximately four times faster than programming
one word at a time. Note that the Secured Silicon, the CFI functions, and the Autoselect Codes
are not available for read when a write buffer programming operation is in progress.
Notes:
1.
2.
Base = Base Address.
Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles
can be from 6 to 37.
For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words)
possible.
3.
The following is a C source code example of using the write buffer program function. See the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Write Buffer Programming Command */
/* NOTES: Write buffer programming limited to 16 words. */
/* All addresses to be written to the flash in */
/* one operation must be within the same flash */
/* page. A flash page begins at addresses */
/* evenly divisible by 0x20. */
UINT16 *src = source_of_data; /* address of source data */
UINT16 *dst = destination_of_data; /* flash destination address */
UINT16 wc = words_to_program -1; /* word count (minus 1) */
*((UINT16 *)base_addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)base_addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)sector_address) = 0x0025; /* write write buffer load command */
*((UINT16 *)sector_address) = wc; /* write word count (minus 1) */
loop:
*dst = *src; /* ALL dst MUST BE SAME PAGE */ /* write source data to destination */
dst++; /* increment destination pointer */
src++; /* increment source pointer */
if (wc == 0) goto confirm /* done when word count equals zero */
wc--; /* decrement word count */
goto loop; /* do it again */
confirm:
*((UINT16 *)sector_address) = 0x0029; /* write confirm command */
/* poll for completion */
/* Example: Write Buffer Abort Reset */
*((UINT16 *)addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)addr + 0x555) = 0x00F0; /* write buffer abort reset */
Software Functions and Sample Code
Table 7.8 Write Buffer Program
(LLD Functions Used = lld_ WriteToBufferCmd, lld_ ProgramBufferToFlashCmd)
Cycle
Description
Operation
Word Address
Data
1
Unlock
Write
Base + 555h
00AAh
2
Unlock
Write
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Program Address
0025h
4
Write Word Count
Write
Program Address
Word Count (N–1)h
Number of w ords ( N) loaded into the w rite buffer can be from 1 to 32 w ords.
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129N80FAW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW00 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N80FAWW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N70GAW000 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW002 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAW003 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW00 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N70GAWW02 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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