參數(shù)資料
型號： S29NS064N0SBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
封裝： 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數(shù)： 78/86頁
文件大?。?/td> 1036K
代理商： S29NS064N0SBJW003
76
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
20. Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 10,000 cycles typical. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 1.70 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster
than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 11.4 on
page 52
for further information on command definitions.
21. BGA Ball Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
64 Kword
V
CC
0.8
3.5
s
Excludes 00h programming prior to
erasure (Note 5)
32 Kword
V
CC
0.6
3
16 Kword
V
CC
0.15
2
8 Kword
V
CC
0.12
2
Chip Erase Time
V
CC
154 (NS256N)
308 (NS256N)
77 (NS128N)
154 (NS128N)
58 (NS064N)
116 (NS064N)
ACC
131 (NS256N)
262 (NS256N)
66 (NS128N)
132 (NS128N)
50 (NS064N)
100 (NS064N)
Single Word Programming Time
V
CC
40
400
us
ACC
24
240
Effective Word Programming Time
utilizing Program Write Buffer
V
CC
9.4
94
ACC
6
60
Total 32-Word Buffer Programming
Time
V
CC
300
3000
ACC
192
1920
Chip Programming Time (Note 4)
V
CC
157.3 (NS256N)
314.6 (NS256N)
s
Excludes system level overhead
(Note 6)
78.6 (NS128N)
157.3 (NS128N)
39.3 (NS064N)
78.6 (NS064N)
ACC
101 (NS256N)
202 (NS256N)
51 (NS128N)
102 (NS128N)
26 (NS064N)
52 (NS064N)
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
3.9
4.7
pF
相關(guān)PDF資料
PDF描述
S29NS128N0PBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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參數(shù)描述
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S29NS128J0LBAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
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