參數(shù)資料
型號： S29NS064N0SBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
封裝： 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數(shù)： 4/86頁
文件大?。?/td> 1036K
代理商： S29NS064N0SBJW003
2
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
1.
General Description
The S29NS256N, S29NS128N and S29NS064N are 256 Mb, 128 Mb and 64Mb (respectively), 1.8 Volt-only,
Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 16,777,216, 8,388,608, and
4,194,304 words of 16 bits each. These devices use a single V
CC
of 1.70 to 1.95 V to read, program, and
erase the memory array. A 9.0-volt ACC, may be used for faster program performance if desired. These
devices can also be programmed in standard EPROM programmers.
The devices are offered at the following speeds:
The devices operate within the temperature range of –25
°
C to
+85
°
C, and are offered in Very Thin FBGA packages.
1.1
Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory space
into sixteen banks. The device allows a host system to program or erase in one bank, then immediately and
simultaneously read from another bank, with zero latency. This releases the system from waiting for the
completion of program or erase operations. The devices are structured as shown in the following tables:
The VersatileIO (V
IO
) control allows the host system to set the voltage levels that the device generates at
its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the
V
CCQ
pin.
The devices use Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output Enable (OE#) to
control asynchronous read and write operations. For burst operations, the devices additionally require Ready
(RDY) and Clock (CLK). This implementation allows easy interface with minimal glue logic to
microprocessors/microcontrollers for high performance read operations.
The devices offer complete compatibility with the
JEDEC 42.4 single-power-supply Flash command set
standard
. Commands are written to the command register using standard microprocessor write timings.
Reading data out of the device are similar to reading from other Flash or EPROM devices.
Clock Speed
Burst Access (ns)
Synch. Initial Access (ns)
Asynch. Initial Access (ns)
Output Loading
80 MHz
9
80
80
30 pF
66 MHz
11.0
80
80
S29NS256N
Bank 0-14 Sectors
Bank 15 Sectors
Quantity
Size
Quantity
Size
240
64 Kwords
4
16 Kwords
15
64 Kwords
240 Mb total
16 Mb total
S29NS128N
Bank 0-14 Sectors
Bank 15 Sectors
Quantity
Size
Quantity
Size
120
64 Kwords
4
16 Kwords
7
64 Kwords
120 Mb total
8
Mb total
S29NS064N
Bank 0-6 Sectors
Bank 7 Sectors
Quantity
Size
Quantity
Size
112
32 Kwords
4
8 Kwords
15
32 Kwords
56 Mbits
8 Mbits
相關(guān)PDF資料
PDF描述
S29NS128N0PBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0SBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0SBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS128J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128J0LBAW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
S29NS128J0LBAW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
S29NS128J0LBAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
S29NS128J0LBFW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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