參數(shù)資料
型號(hào)： S29NS064N0SBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
封裝： 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁(yè)數(shù)： 24/86頁(yè)
文件大小： 1036K
代理商： S29NS064N0SBJW003
22
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Note: Dynamic protection bits revert back to their default values after programming device’s “Lock Register.”
It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic state.
The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB
Set command sequence is all that is necessary. The DYB Set or Clear command for the dynamic sectors
signify protected or unprotected state of the sectors respectively. However, if there is a need to change the
status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be
cleared by either putting the device through a power-cycle, or hardware reset. The PPBs can then be
changed to reflect the desired settings. Setting the PPB Lock Bit once again will lock the PPBs, and the
device operates normally again.
Note: To achieve the best protection, it’s recommended to execute the PPB Lock Bit Set command early in
the boot code, and protect the boot code by holding WP# = V
IL
. Note that the PPB and DYB bits have the
same function when ACC = V
HH
as they do when ACC = V
IH
.
Table 8.10
contains all possible combinations of the DYB, PPB, and PPB Lock relating to the status of the
sector.
In summary, if the PPB is set (programmed to “0”), and the PPB Lock is set (programmed to “0”), the sector is
protected and the protection can not be removed until the next power cycle clears (erase to “1”) the PPB Lock
Bit. Once the PPB Lock Bit is cleared (erased to “1”), the sector can be persistently locked or unlocked.
Likewise, if both PPB Lock Bit or PPB is cleared (erased to “1”) the sector can then be dynamically locked or
unlocked. The DYB then controls whether or not the sector is protected or unprotected.
If the user attempts to program or erase a protected sector, the device ignores the command and returns to
read mode. A program or erase command to a protected sector enables status polling and returns to read
mode without having modified the contents of the protected sector.
The programming of the DYB, PPB, and PPB Lock for a given sector can be verified by writing individual
status read commands DYB Status, PPB Status, and PPB Lock Status to the device.
8.15
Persistent Sector Protection Mode Lock Bit
A Persistent Mode Lock Bit exists to guarantee that the device remain in software sector protection. Once
programmed (set to “0”), the Persistent Mode Lock Bit prevents programming of the Password Mode Lock Bit.
This guarantees that now, a hacker cannot place the device in Password Sector Protection Mode.
8.16
Password Sector Protection
The Password Sector Protection Mode method allows an even higher level of security than the Persistent
Sector Protection Mode. There are two main differences between the Persistent Sector Protection Mode and
the Password Sector Protection Mode:
When the device is first powered up, or comes out of a reset cycle, the
PPB Lock Bit is set to the locked
state
, rather than cleared to the unlocked state.
The only means to clear the PPB Lock Bit is by writing a unique
64-bit Password
to the device.
The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in this method.
Table 8.10
Sector Protection Schemes
DYB
PPB
PPB Lock
Sector State
1
1
1
Sector Unprotected
0
1
1
Sector Protected through DYB
1
0
1
Sector Protected through PPB
0
0
1
Sector Protected through PPB and DYB
1
1
0
Sector Unprotected
0
1
0
Sector Protected through DYB
1
0
0
Sector Protected through PPB
0
0
0
Sector Protected through PPB and DYB
相關(guān)PDF資料
PDF描述
S29NS128N0PBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0SBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0SBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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