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參數(shù)資料
| 型號(hào)： | S29NS064N0SBJW003 |
| 廠(chǎng)商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁(yè)數(shù)： | 54/86頁(yè) |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS064N0SBJW003 |
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52
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Note:
The bank entered during entry is the active bank. Take for example the active bank is BA0. Any reads
in BA0 will result in status reads of the DYB bit. If the user wants to set (programmed to “0”) in a different bank
other than the active bank, say for example BA5, then the active bank switches from BA0 to BA5. Reading in
BA5 will result in status read of the bit whereas reading in BA0 will result in true data.
The
Volatile Sector Protection Command Set Exit
command must be issued after the execution of the
commands listed previously to reset the device to read mode.
Note that issuing the
Volatile Sector Protection Command Set Exit
command re-enables reads and writes
for the bank selected.
Table 11.4
Command Definitions (Sheet 1 of 3)
Command Sequence
(Notes)
C
Bus Cycles (Notes
1
–
6
)
First
Second
Third
Fourth
Fifth
Sixth
Seventh
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Asynchronous Read (
7
)
1
RA
RD
Reset (
8
)
1
XXX
F0
A
9
)
Manufacturer ID
4
555
AA
2AA
55
(BA)
555
90
(BA)
X00
0001
Device ID
6
555
AA
2AA
55
(BA)
555
90
(BA)
X01
(Note
10)
(BA)
X0E
(Note
10)
(BA)
X0F
(Note
10)
Indicator Bits (11)
4
555
AA
2AA
55
(BA)
555
90
(BA)
X0D
(Note
11)
Revision ID
4
555
AA
2AA
55
(BA)
555
90
(BA)
X03
U
Mode Entry
3
555
AA
2AA
55
555
20
Program (
12
)
2
XXX
A0
PA
PD
Reset (
13
)
2
BA
90
XXX
00
CFI
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (
17
)
6
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (
20
)
3
555
AA
2AA
55
555
F0
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend / Program Suspend
(
14
)
1
BA
B0
Erase Resume / Program Resume
(
15
)
1
BA
30
Set Config. Register (28)
4
555
AA
2AA
55
555
D0
X00
CR
Read Configuration Register
4
555
AA
2AA
55
555
C6
X00
CR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS128N0PBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0PBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0PBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0SBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0SBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS128J0LBAW00 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128J0LBAW000 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS128J0LBAW002 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS128J0LBAW003 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS128J0LBFW00 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
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