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參數(shù)資料
| 型號： | S29NS064N0SBJW002 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 85/86頁 |
| 文件大小： | 1036K |
| 代理商： | S29NS064N0SBJW002 |
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S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
83
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Updated max value for 8 Kword Sector Erase Time
Updated typical and max values for Chip Programming Time
24.9
Revision A7 (September 16, 2005)
Ordering Information
Updated the Package Type options
Valid Combinations table
Updated entire table to show new options
24.10 Revision A8 (September 23, 2005)
Dynamic Protection Bit (DYB)
Added note: Dynamic protection bits revert back to their default values after programming the device “Lock
Register.”
Lock Register Table
Added Note: When the device lock register is programmed (PPB mode lock bit is programmed, password
mode lock bit programmed, or the Secured Silicon lock bit is programmed) all DYBs revert to the power-on
default state.
24.11 Revision A9 (November 15, 2005)
Write Buffer Programming Operation
Updated the flowchart
24.12 Revision A10 (March 23, 2006)
Asynchronous Read AC Characteristics table
Updated the minimum specifications of t
AAVDH
for both speed bins.
Global Change
Changed V
PP
to ACC
24.13 Revision A11 (April 20, 2006)
Global Change
Changed layout and font
Absolute Maximum Ratings
Updated Figure 13.1 and 13.2
24.14 Revision A12 (June 13, 2006)
Global Change
Publication Identification number was incorrectly set to S29NS-N_01 for revision 11 instead of S29NS-N_00.
It is corrected in this revision. The document file name was not affected by this error.
Added a note to Table 8.1 Device Bus Operations
Added a note to Table 11.1 Configuration Register
Added a note to section 11.9 Erase Suspend/Erase Resume Commands
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS064N0SBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0PBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0PBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0PBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0SBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS064N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128J0LBAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS128J0LBAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS128J0LBAW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
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