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參數(shù)資料
| 型號： | S29NS064N0SBJW000 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 42/86頁 |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS064N0SBJW000 |
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40
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank was in Erase Suspend).
Note: If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to
Buffer Abort Reset” command sequence to RESET the device to reading array data. The standard RESET
command will not work. See
Table 11.4 on page 52
for details on this command sequence.
11.2
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 11.4 on page 52
shows the address and data
requirements. The autoselect command sequence may be written to an address within a bank that is either in
the read or erase-suspend-read mode. The autoselect command may not be written while the device is
actively programming or erasing in the other bank. Autoselect does not support simultaneous operations or
burst mode.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect
mode. The system may read at any address within the same bank any number of times without initiating
another autoselect command sequence. The following table describes the address requirements for the
various autoselect functions, and the resulting data. BA represents the bank address. The device ID is read in
three cycles. During this time, other banks are still available to read the data from the memory.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
11.3
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, eight word electronic
serial number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle
Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon
Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit
Secured Silicon Sector command sequence returns the device to normal operation. The Secured Silicon
Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
Table 11.4 on page 52
shows the address and data requirements for both command sequences.
Table 11.2
Device ID
Description
Address
Read Data
256N
128N
064N
Manufacturer ID
(BA) + 00h
0001h
0001h
0001h
Device ID, Word 1
(BA) + 01h
2D7E
2C7Eh
2B7Eh
Device ID, Word 2
(BA) + 0Eh
2D2F
2C35h
2B33h
Device ID, Word 3
(BA) + 0Fh
2D00
2C00h
2B00h
Revision ID
(BA) + 03h
TBD
Sector Block
Lock/Unlock
(SA) = 02h
0001 - Locked
0000 - Unlocked
Indicator Bits
(BA) + 07h
DQ15 - DQ8 = Reserved
DQ7 - Factory Lock Bit
1 = Locked, 0 = Not Locked
DQ6 - Customer Lock Bit
1 = Locked, 0 = Not Locked
DQ5 Handshake Bit
1 = Reserved
0 = Standard Handshake
DQ4 & DQ3 - WP# Protections Boot Code
01 = WP# Protects only the Top Boot Sectors
DQ2-DQ0 = Reserved
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相關代理商/技術參數(shù) |
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| S29NS064N0SBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128J0LBAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
| S29NS128J0LBAW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
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